High reliability 1.3-μm buried heterostructure AlGaInAs-MQW DFB laser operated at 28-Gbit/s direct modulation

Semiconductor Laser Conference, 2012, Pages 52-53.

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摘要

Clear eye opening at 28-Gbit/s direct modulation up to 75°C is achieved with 1.3-μm buried heterostructure AlGaInAs-MQW DFB laser. No failure had occurred at high optical output power aging test over 7000 hours.

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