Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPs
Semiconductor Electronics（2012）
摘要
The influence of post deposition annealing (PDA) temperatures on electrical characteristics of Al2O3/InSb metal-oxide-semiconductor capacitor (MOSCAP) structures is investigated. Low frequency C-V responses with strong inversion behavior in the whole range of measured frequency (100 Hz-1 MHz) are observed, indicating very short minority carrier response time in InSb. The PDA temperature of 300°C and above would result in the reduction of maximum capacitance. At the PDA temperature of above 300°C the C-V hysteresis, frequency dispersion and stretch out increases significantly, indicating the degradation of the MOSCAP structures. The degradation might relate to the interdiffusion between Al2O3 and InSb during thermal steps.
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关键词
III-V semiconductors,MIS structures,MOS capacitors,aluminium compounds,annealing,chemical interdiffusion,indium compounds,minority carriers,Al2O3-InSb,C-V hysteresis,MOSCAP structures,electrical properties,frequency 100 Hz to 1 MHz,frequency dispersion,interdiffusion,low frequency C-V responses,metal-oxide-semiconductor capacitor structures,post deposition annealing temperatures,strong inversion behavior,temperature 300 degC,very short minority carrier response time
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