Characterization of millisecond-anneal-induced defects in SiON and SiON/Si interface by gate current fluctuation measurement
Reliability Physics Symposium(2010)
摘要
In this paper, we have investigated bulk trap and interface trap density (Dit) caused by millisecond annealing (MSA) using gate current fluctuation (GCF) and charge pumping measurements. We show that the high energy flash lamp annealing (FLA) creates the GCF with a long duration time and it is critical issue to get a stable SRAM operation. FLA creates interface traps localized at the gate edge of MOSFET.
更多查看译文
关键词
mosfet,sram chips,elemental semiconductors,incoherent light annealing,interface states,silicon,silicon compounds,fla,msa,sram operation,sion,sion-si,bulk trap,charge pumping measurements,flash lamp annealing,gate current fluctuation measurement,interface trap density,millisecond-anneal-induced defects,dit,sram reliability,vmin,charge pumping,component,gate current fluctuation,laser annealing,millisecond-anneal,charge pump,temperature measurement,temperature,annealing,logic gates,fluctuations
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络