Investigations of Cu bond structures and demonstration of a wafer-level 3D integration scheme with W TSVs

K N Chen,C Cabral,S H Lee,Paul S Andry,Jun Q Lu

VLSI Technology Systems and Applications（2010）

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摘要

Evaluations of two Cu bond structures, oxide-recessed and lock-n-key, are reported. In addition to excellent electrical characteristics of bonded via chain, alignment tests show lock-n-key bond structures have better performance than oxide-recessed ones. Finally a wafer-level three-dimensional (3D) integration scheme using lock-n-key Cu bond structure with W TSV is demonstrated.

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关键词

copper,three-dimensional integrated circuits,wafer bonding,cu,tsv,lock-n-key bond structures,oxide-recessed bond structure,wafer-level three-dimensional integration scheme,3d,cu bonding,oxide-recess and lock-n-key,etching,testing,three dimensional,force,polymers,temperature

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