Development, characterization and integration of a novel boron nitride process for application as a Cu diffusion barrier
Interconnect Technology Conference(2010)
摘要
The properties of boron nitride (BN) films cyclically-deposited by means of PECVD have been studied. Cyclical deposition is critical to improve the density and reduce the k of the material. When compared to conventional SiCN barriers, this material demonstrates greatly reduced leakage, superior mechanical properties and better etch selectivity. Therefore, BN is a promising candidate as a low k dielectric copper barrier and etch stop.
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关键词
iii-v semiconductors,boron compounds,chemical vapour deposition,compressibility,copper,diffusion barriers,etching,low-k dielectric thin films,semiconductor thin films,silicon compounds,wide band gap semiconductors,bn,pecvd,sicn,boron nitride films,compressive stress,copper diffusion barrier,cyclical deposition,etch selectivity,low-k dielectric film,dielectric constant,thermal stability,tensile stress,dielectric breakdown,dielectric materials,films,boron,curing
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