Determination of the local electric field strength near electric breakdown

Geinzer, T.,Heiderhoff, R.,Phang, J.C.H., Balk, L.J.

Physical and Failure Analysis of Integrated Circuits（2010）

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摘要

For a detailed understanding of near electric breakdown a semiconductor device is analyzed by complementary Optical Beam Induced Current and energy-dispersive Photon Emission Microscopy. The potential and limit as well as the physical background of both techniques for the determination of the local electric field strength are discussed in detail.

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关键词

obic,electric field measurement,semiconductor device breakdown,semiconductor device reliability,complementary optical beam induced current,electric breakdown,energy-dispersive photon emission microscopy,local electric field strength,semiconductor device,failure analysis,photonics,optical microscopy,stimulated emission,optical filters,electric field,electric fields,avalanche breakdown,optical scattering,correlation,semiconductor devices

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