Study of the interference and disturb mechanisms of split-page 3D vertical gate (VG) NAND flash and optimized programming algorithms for multi-level cell (MLC) storage

VLSI Technology, 2013, Pages T156-T157.

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Keywords:
nand circuitsflash memories2d floating gate nand flash3d nandmlc operationMore(14+)

Abstract:

Multi-level cell (MLC) programming is of crucial importance to make a cost competitive NAND Flash product. In conventional 2D floating gate NAND Flash, the interference and disturb become very severe as technology scales, and many methods have been adopted to alleviate the interferences. In 3D NAND, the pitch is generally larger and the c...More

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