Direct Laser Doping of Poly-Silicon Thin Films Via Laser Chemical Processing
Photovoltaics, IEEE Journal of(2013)
摘要
Laser chemical processing (LCP) is an attractive doping technique for thin films due to its process simplicity, high achievable doping concentrations, and relatively shallow doping depths. During LCP processing, an infinite supply of dopants is available from the pressurized doping medium. In this paper, LCP is employed for n-type doping of poly-silicon thin films on glass. We achieved a peak doping concentration of 6 × 1018 to 1 × 1019 cm-3 and a junction depth up to 350 nm, as determined by electrochemical capacitance-voltage profiling and secondary ion mass spectrometry. We evaluate the structural quality of the LCP-doped layers with cross-sectional transmission electron microscopy (XTEM), as well as ultraviolet reflectance measurements. The LCP-doped regions are of suitable material quality for device fabrication. The resulting sheet resistance and doping levels are promising for a back surface field for poly-silicon thin-film solar cells on glass (e.g., an n+/ n-/ p+/glass layer structure in superstrate configuration).
更多查看译文
关键词
doping profiles,electrical resistivity,electrochemical analysis,elemental semiconductors,laser materials processing,reflectivity,secondary ion mass spectra,semiconductor doping,semiconductor thin films,silicon,transmission electron microscopy,ultraviolet spectra,lcp processing,si,cross sectional transmission electron microscopy,direct laser doping,doping concentration,doping depth,electrochemical capacitance-voltage profiling,junction depth,laser chemical processing,polysilicon thin films,pressurized doping medium,secondary ion mass spectrometry,sheet resistance,structural quality,ultraviolet reflectance measurement,laser chemical processing (lcp),nd:yag,laser doping,poly-silicon thin film
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络