High-endurance solar-blind photodetectors using AlN on Si substrates for extreme harsh environment applications

Dungsheng Tsai,Weicheng Lien,Derhsien Lien,Kuanming Chen, Menglin Tsai,Debbie G Senesky,Yuehchung Yu,Albert P Pisano,Jrhau He

Device Research Conference（2013）

引用 0|浏览13

暂无评分

摘要

In this paper, the metal-semiconductor-metal (MSM) Schottky AlN photodetectors (PDs) on Si substrates show a dark current as low as ~1 nA at a bias up to 200 V. Excellent thermal stability and radiation hardness of solar-blind AlN MSM PDs are achieved. The working temperature is up to 300 °C and the radiation tolerance is up to 1013 cm-2 of 2 MeV proton fluences for AlN MSM PDs. The results demonstrate the high promise of AlN as an active material for solar-blind DUV photodetection in extremely harsh environments.

查看译文

关键词

iii-v semiconductors,schottky effect,aluminium compounds,metal-semiconductor-metal structures,photodetectors,proton effects,radiation hardening (electronics),wide band gap semiconductors,aln,aln thin films,si,si(100) substrates,dark current,electron volt energy 2 mev,extreme harsh environment applications,high-endurance solar-blind photodetectors,proton fluences,radiation hardness,radiation tolerance,thermal stability,protons,temperature measurement

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要