High threshold voltage in GaN MOS-HEMTs modulated by fluorine plasma and gate oxide

Device Research Conference, 2013, Pages 141-142.

Cited by: 4|Bibtex|Views1|DOI:https://doi.org/10.1109/DRC.2013.6633833
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Abstract:

AlGaN/GaN high-electron-mobility transistors (HEMTs) have great potential for the next generation of power electronics. In this application, enhancement-mode (E-mode) metal-oxide-semiconductor (MOS) HEMTs with a threshold voltage (Vth) ~ 3 V are highly desirable as they allow simpler circuits and fail-safe operation. However, it has been ...More

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