Ultrahigh voltage SiC bipolar devices
Wide Bandgap Power Devices and Applications（2013）
摘要
Ultrahigh voltage SiC bipolar devices more than 13 kV were developed, and their package technology was investigated. As a result, we have succeeded in creating a 13kV level PiN diode without forward voltage degradation by using 4° off substrates and a 15kV p-channel IGBT with a low differential specific on-resistance (Rdiff,on) at high temperature. Moreover, the results reveal that the nano-tech resin, improved resin and Si3N4 DBC substrate are the best materials for package at high temperature and ultrahigh voltage.
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关键词
insulated gate bipolar transistors,p-i-n diodes,power bipolar transistors,silicon compounds,wide band gap semiconductors,dbc substrate,pin diode,si3n4,sic,low differential specific on-resistance,nanotech resin,p-channel igbt,package technology,ultrahigh voltage sic bipolar devices,voltage 13 kv
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