A novel dual-channel 3D NAND flash featuring both N-channel and P-channel NAND characteristics for bit-alterable Flash memory and a new opportunity in sensing the stored charge in the WL space

Electron Devices Meeting, 2013, Pages 3.7.1-3.7.4.

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Keywords:
flash memoriesthree-dimensional integrated circuitswl spacebit alterable flash memorycarrier sourceMore(7+)

Abstract:

This work proposes a novel dual-channel 3D NAND Flash that exhibits both n-channel and p-channel NAND characteristics. The NAND is junction-free without dopant inside the array. Unlike the conventional 3D NAND, the drain side near SSL is N+ doped junction, while source side near GSL is P+ junction. A positive pass-gate read voltage (Vpass...More

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