Strained germanium nanowire MOSFETs

Keiji Ikeda,Yuuichi Kamimuta,Yoshihiko Moriyama,Mizuki Ono,Minoru Oda,Toshifumi Irisawa,Tsutomu Tezuka

Silicon-Germanium Technology and Device Meeting（2014）

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摘要

Ge nanowire MOSFETs with a uniaxial compressive strain as high as 3.9% were demonstrated by 2-step Ge-condensation technique. Record high hole mobility (μeff = 1922 cm[su2}/Vs) and record-low off-current (2.7×10-9A/μm at Vd = -0.5 V) were achieved among scaled (sub-100nm Lg) Ge MOSFET for the device with the Lg of 45nm. These results indicate that strained-Ge channels have a potential to serve as pFET channel of scaled future CMOS.

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关键词

mosfet,elemental semiconductors,germanium,hole mobility,nanowires,2-step ge-condensation technique,ge,compressive strain,off-current,pfet channel,strained germanium nanowire mosfet,strain,logic gates

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