Effects of FBAR resonator dissipated power on discrete oscillator phase noise

Ultrasonics Symposium(2014)

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摘要
We present single-ended and balanced configurations of modified Colpitts voltage controlled oscillators utilizing zero drift FBARs that are compatible with high volume manufacturing. These oscillators have been built with resonators spanning frequencies between 384 MHz and 3900 MHz, demonstrating that temperature compensated FBAR is useful over a decade frequency range for oscillator applications. Over the 1 GHz to 2.5 GHz range, we have observed mean jitter less than 10 fsec (integrated over a 12 kHz to 20 MHz offset), with the best devices demonstrating performance of 5.5 fs. The resonator is 27,000 square microns in a .43 × .35 × .23 mm package. The oscillators are designed to support a temperature range from -40 to 85°C. Due to the ability of the resonator to remain linear at dissipated power values up to 25 mW, far-from-carrier phase noise as low as -185 dBc/Hz @ 10 MHz has been achieved.
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关键词
acoustic resonators,bulk acoustic wave devices,jitter,oscillators,phase noise,fbar resonator dissipated power,carrier phase noise,discrete oscillator phase noise,film bulk acoustic resonator,frequency 384 mhz to 2.5 ghz,high volume manufacturing,mean jitter,modified colpitts voltage-controlled oscillators,temperature -40 degc to 85 degc,time 5.5 fs,baw,fbar,zero drift,frequency reference,voltage controlled oscillator,resonant frequency,frequency control
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