An observation of charge trapping phenomena in GaN/AlGaN/Gd2O3 MOS schottky structure

Das, A., Liann Be Chang,Lin, R.M.,Maikap, S.

Nanoelectronics Conference（2011）

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摘要

Charge trapping specially electron trapping phenomenon is observed in GaN/AlGaN/Gd2O3 MOS Schottky structure for first time. Under positive pulse programming, a significant hysteresis window is observed. A 4.4V hysteresis window is observed under +10V@100ms pulse programming. It is worthy to mention that no erase phenomenon is observed, even very large negative bias such as -40V. Only time dependent natural charge loss is observed. Even so, a 1.76V hysteresis window is still remained after 14 hours of retention. It is inferred that our fabricated MOS structure is behaved as a storage node under positive pulse programming. Good charge retention is observed and it may be used as the Write Once Read Many (WORM) memory in future.

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关键词

III-V semiconductors,MIS structures,aluminium compounds,electron traps,gadolinium compounds,gallium compounds,wide band gap semiconductors,write-once storage,GaN-AlGaN-Gd2O3,MOS Schottky structure,WORM memory,charge retention,charge trapping,electron trapping,hysteresis window,positive pulse programming,time dependent natural charge loss,voltage 4.4 V,write once read many,Charge trapping,GaN/AlGaN,memory,retention

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