Ultrathin InAs-channel MOSFETs on Si substrates
VLSI Technology, Systems and Application(2015)
摘要
Planar ultrathin InAs-channel MOSFETs were demonstrated on Si substrates with gate lengths (Lg) as small as 20 nm. The III-V epitaxial buffer layers were grown on 300 mm Si substrates by metal-organic chemical vapor deposition (MOCVD) and the subsequent InAlAs bottom barriers and InAs channel were grown by molecular beam epitaxy (MBE). The devices at 20 nm Lg show high transconductance, ∼2.0 mS/μm at VDS=0.5V.
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关键词
silicon,mocvd,logic gates,molecular beam epitaxy
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