Back-hopping Phenomenon in Perpendicular Mangetic Tunnel Junctions
2015 International Symposium on VLSI Technology, Systems and Applications(2015)
摘要
This study shows a clear correlation between back hopping, write error rate, bias-dependent coercivity (Hc) and the switching phase diagram (SPD) of p-MTJs. Data support that the bias-induced fieldlike torque, in addition to the Slonczewski anti-damping torque, at higher bias voltages in dual-MgO p-MTJ, and a thinner MgO capping layer may suppress the occurrence of back hopping.
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