Intrinsic Mobility in Graphene

In this work, we report the limit of intrinsic mobility that can be achieved in graphene at room temperature. Experimental measurements confirmed that the carrier mobility in graphene is primarily affected by the charged impurity present in the system. Intrinsic phonon limited mobility can be achieved when this effect is negligible. The values of the coupling constants for the phonon scatterings were extracted from fitting measured data. Absolute theoretical limit of intrinsic mobility was found from our simulation to be 200,000 cm(2)/Vs at the Dirac point at room temperature.