Metal/SI GaAs/Metal systems: Demonstration of unpinning of the Fermi level at the interface

F Dubecky,P Hubik,E Gombia,D Kindl, Matus Dubecky, J Mudron,P Bohacek,M Sekacova

Advanced Semiconductor Devices & Microsystems（2012）

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摘要

The work reports on the study of metal/semi-insulating GaAs/metal systems with different contacts: Mg, Gd, In and AuGeNi eutectic. Charge carrier transport through the interface is characterized by the current-voltage measurements. Observed results: i) opposite generally accepted “ohmic, bulk limited” charge transport at low bias, ii) are in contradiction with the thermionic emission model of charge transport in M-SI GaAs, and iii) demonstrate the unpinning of the Fermi level at the M-SI GaAs interface.

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关键词

fermi level,iii-v semiconductors,carrier relaxation time,electrical contacts,gadolinium,gallium arsenide,germanium compounds,gold compounds,indium,magnesium,thermionic emission,augeni,augeni eutectic,gaas,gd,gd eutectic,in,in eutectic,mg,mg eutectic,bulk limited charge transport,charge carrier transport,contacts,current-voltage measurements,low bias,metal/semiinsulating gaas/metal systems,ohmic charge transport,unpinning demonstration

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