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Linearization Study of A Highly Efficient Cmos-Gan Rf Pulse Width Modulation Based Transmitter

Microwave Conference(2012)

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摘要
This paper studies linearity of a 2 GHz, 10 Watt peak output power RF pulse width modulation (RF-PWM) based transmitter. The transmitter incorporates a tunable load network class-E PA as the final output stage. The tunable load network enables dynamic optimization of the class-E along with the duty cycle resulting in high efficiency over a wide range of output power levels. A digital predistiortion based linearization scheme is proposed to enhance the linearity of the transmitter. After linearization, the transmitter exhibits an adjacent channel power ratio (ACPR) of -45 dBc with a 3.84 MHz, 6.7 dB peak-to-average power ratio (PAPR) W-CDMA signal. The average drain efficiency of the GaN HEMT output stage is 67% and the total transmitter efficiency is 54%.
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关键词
CMOS integrated circuits,III-V semiconductors,UHF integrated circuits,UHF transistors,gallium compounds,high electron mobility transistors,optimisation,pulse width modulation,radio transmitters,wide band gap semiconductors,ACPR,GaN,HEMT,PAPR W-CDMA signal,RF-PWM based transmitter,adjacent channel power ratio,digital predistiortion based linearization scheme,dynamic optimization,efficiency 54 percent,frequency 2 GHz,frequency 3.84 MHz,highly efficient CMOS-RF pulse width modulation based transmitter,peak-to-average power ratio W-CDMA signal,power 10 W,tunable load network class-E PA
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