Radically extending the cycling endurance of Flash memory (to > 100M Cycles) by using built-in thermal annealing to self-heal the stress-induced damage

Electron Devices Meeting, 2012, Pages 9.1.1-9.1.4.

Cited by: 10|Bibtex|Views16|DOI:https://doi.org/10.1109/IEDM.2012.6479008
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Abstract:

Flash memory endurance is limited by the tunnel oxide degradation after repeated P/E stressing in strong electric field. Thermal annealing should be able to repair the oxide damage but such theory cannot be tested in real time since completed device cannot endure high temperature > 400°C and long baking time is impractical for real time o...More

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