Intersubband all-optical switch with bandgap control of InGaAs/AlAsSb quantum wells

OptoElectronics and Communications Conference held jointly with 2013 International Conference Photonics in Switching(2013)

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摘要
Bandgap control of ion-induced intermixing on InGaAs/AlAsSb coupled double quantum wells is studied. Moreover, a monolithic all-optical Michelson interferometer gating switch integrated with two different bandgap energies is developed based on the area-selective method.
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关键词
iii-v semiconductors,michelson interferometers,aluminium compounds,energy gap,gallium arsenide,indium compounds,optical switches,semiconductor quantum wells,ingaas-alassb,ingaas-alassb coupled double quantum wells,bandgap control,gating switch,intersubband all-optical switch,ion-induced intermixing,monolithic all-optical michelson interferometer
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