CVD Mn-based self-formed barrier for advanced interconnect technology

Yong Kong Siew,Nicolas Jourdan,Yohan Barbarin,J Machillot,S Demuynck,Kristof Croes,Jenchou Tseng,Hua Ai, Ju Tang,M I Naik, Peng Wang, Murali K Narasimhan, M Abraham,A Cockburn,J Bommels,Zs Tokei

Interconnect Technology Conference（2013）

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摘要

CVD Mn-based self-formed barrier (SFB) has been evaluated and integrated for reliability and RC delay assessment. Intrinsic TDDB lifetimes were extracted from planar capacitor measurement. A comparable lifetime as the TaN/Ta reference was obtained on SiO2 and porous low-k with a thin oxide liner. Good reliability performance was demonstrated after integration. Compared to conventional barrier, significant RC reduction (up to 45% at 40nm half pitch) and lower via resistance which become more beneficial upon scaling present CVD Mn-based SFB as an attractive candidate for future interconnect technology.

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关键词

chemical vapour deposition,manganese,semiconductor device breakdown,semiconductor device metallisation,semiconductor device reliability,silicon compounds,cvd self formed barrier,mn,rc delay assessment,sio2,advanced interconnect technology,planar capacitor measurement,porous low k,thin oxide liner,reliability,resistance,adhesives

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