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We have fabricated and characterized underlap top-gate and global back-gate InAs Nanowire field-effect transistors, and demonstrated the highest semiconductor nanowire electron mobility reported to date

High electron mobility InAs nanowire field-effect transistors.

SMALL, no. 2 (2007): 326-332

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摘要

Single-crystal InAs nanowires (NWs) are synthesized using metal-organic chemical vapor deposition (MOCVD) and fabricated into NW field-effect transistors (NWFETs) on a SiO2/n(+)-Si substrate with a global n(+)-Si back-gate and sputtered SiOx/Au underlap top-gate. For top-gate NWFETs, we have developed a model that allows accurate estimati...更多

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简介
  • Semiconductor nanowires are very attractive and versatile building blocks for future electronic systems because of the unique possibilities they offer for the rational control of fundamental properties such as dimension, composition, and doping during growth.[1,2] A wide range of nanowire ACHTUNGRE(NW)based devices and systems, including transistors and circuits,[3,4,5] light emitters,[6,7,8,9] and sensors,[10] have been explored.
  • InAs in particular is an attractive candidate for NW-based electronic devices because of its very high electron mobility at room temperature[20] and its surface Fermilevel pinning in the conduction band,[21] which lead to the formation of an electron surface accumulation layer[22] and allow straightforward formation of low-resistance ohmic contacts.[23] resonant tunneling diodes,[24] single-electron transistors,[25] and Josephson junctions[26] have been implemented using InAs NWs and InAs/InP NW heterostructures with carrier mobilities in the range of 200–3000 cm VÀ1 sÀ1.[16, 25]
重点内容
  • Semiconductor nanowires are very attractive and versatile building blocks for future electronic systems because of the unique possibilities they offer for the rational control of fundamental properties such as dimension, composition, and doping during growth.[1,2] A wide range of nanowire ACHTUNGRE(NW)based devices and systems, including transistors and circuits,[3,4,5] light emitters,[6,7,8,9] and sensors,[10] have been explored
  • We have fabricated and characterized underlap top-gate and global back-gate InAs Nanowire field-effect transistors (NWFETs), and demonstrated the highest semiconductor nanowire electron mobility reported to date
  • For top-gate NWFETs, we have developed a model that allows a more accurate estimation of field-effect mobility and carrier concentration in semiconductor nanowires by taking into account series and leakage resistances, interface-state capacitance, and top-gate geometry for oxide-capacitance calculation
  • A peak mobility value of 6580 cm2 VÀ1 sÀ1 at low drift fields of % 1.5 kV cmÀ1 was measured in a top-gate InAs NWFET, and measurements on several devices yielded a representative average mobility value of % 3400 cm2 VÀ1 sÀ1
  • Both values represent lower bounds on the calculated mobility, which are conservative estimates because 1) the lowest possible ohmic contact resistance was used; 2) the lower extracted transconductance from the hysteretic NWFET measurements was employed for mobility calculation, and 3) the effect of surface states has not been taken into account
  • These results demonstrate the promising potential of using InAs nanowires for highspeed nanoelectronics
结果
  • The as-grown InAs nanowires on a SiO2/n+-Si substrate were 30–75 nm in diameter and 20–30 mm long, as shown in the representative scanning electron microscopy (SEM) image (Figure 1 a).
  • VDS, VGS and IDS are related to the active transistor portion of the device
结论
  • The authors have fabricated and characterized underlap top-gate and global back-gate InAs NWFETs, and demonstrated the highest semiconductor nanowire electron mobility reported to date.
  • A peak mobility value of 6580 cm VÀ1 sÀ1 at low drift fields of % 1.5 kV cmÀ1 was measured in a top-gate InAs NWFET, and measurements on several devices yielded a representative average mobility value of % 3400 cm VÀ1 sÀ1
  • Both values represent lower bounds on the calculated mobility, which are conservative estimates because 1) the lowest possible ohmic contact resistance was used; 2) the lower extracted transconductance from the hysteretic NWFET measurements was employed for mobility calculation, and 3) the effect of surface states has not been taken into account.
  • These results demonstrate the promising potential of using InAs nanowires for highspeed nanoelectronics
表格
  • Table1: Summary of some representative InAs NWFET parameters and calculated field-effect mobility
  • Table2: Comparison of different semiconductor NWFETs (nonpassivated nanowires)
Download tables as Excel
基金
  • This work was supported in part by the Office of Naval Research (ONR Nanoelectronics), the National Science Foundation (ECS-0506902), and Sharp Labs of America
研究对象与分析
full papers: 327
2007 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim www.small-journal.com 327 full papers probe microscopy (SPM) measurements on NWs grown and fabricated together with the devices we report in this paper have demonstrated ballistic or nearly ballistic transport only over distances of up to 200 nm, much shorter than the gate lengths employed here.[27,29]. The gate capacitance, C, is critical in obtaining the fieldeffect mobility

引用论文
  • [13] Y. Cui, Z. Zhong, D. Wang, W. Wang, C. M. Lieber, Nano Lett.
    Google ScholarFindings
  • [14] Y. Huang, X. F. Duan, Y. Cui, C. M. Lieber, Nano Lett. 2005, 2, 101.
    Google ScholarFindings
  • [15] S. A. Dayeh, D. Aplin, X. Zhou, P. K. L. Yu, E. T. Yu, D. Wang, 47th TMS Annual Electronic Materials Conference, Santa Barbara, 2005.
    Google ScholarLocate open access versionFindings
  • [16] T. Bryllert, L. Samuelson, L. Jensen, L. Wernersson, DRC Proc. 2005, 1, 157.
    Google ScholarFindings
  • [17] J. Goldberger, D. Sirbuly, M. Law, P. Yang, J. Phys. Chem. B 2005, 109, 9.
    Google ScholarLocate open access versionFindings
  • [18] H. T. Ng, J. Han, T. Yamada, P. Nguyen, Y. P. Chen, M. Meyyappan, Nano Lett. 2004, 4, 1247.
    Google ScholarFindings
  • [19] D. Zhang, C. Li, S. Han, X. Liu, T. Tang, W. Jin, C. Zhou, Appl. Phys. Lett. 2003, 82, 112.
    Google ScholarLocate open access versionFindings
  • [20] S. M. Sze, Physics of Semiconductor Devices (2nd ed.) Wiley Interscience, 1981.
    Google ScholarFindings
  • [21] C. A. Mead, W. G. Spitzer, Phys. Rev. Lett. 1963, 10, 471.
    Google ScholarLocate open access versionFindings
  • [22] M. Noguchi, K. Hirakawa, T. Ikoma, Phys. Rev. Lett. 1991, 66, 2243.
    Google ScholarLocate open access versionFindings
  • [23] J. M. Woodall, J. L. Freeouf, G. D. Pettit, T. Jackson, P. Kircher, J. Vac. Sci. Technol. 1981, 19, 626.
    Google ScholarLocate open access versionFindings
  • [24] M. T. Bjçrk, B. J. Ohlsson, C. Thelander, A. I. Persson, K. Deppert, L. R. Wallenberg, L. Samuelson, Appl. Phys. Lett. 2002, 81, 4458.
    Google ScholarLocate open access versionFindings
  • [25] C. Thelander, T. Martensson, M. T. Bjork, B. J. Ohlsson, M. W. Larsson, L. R. Wallenberg, L. Samuelson, Appl. Phys. Lett. 2003, 83, 2052.
    Google ScholarLocate open access versionFindings
  • [26] Y. J. Doh, J. A. van Dam, A. L. Roest, E. P. A. M. Bakkers, L. P. Kouwenhoven, S. De Franceschi, Science 2005, 309, 272.
    Google ScholarLocate open access versionFindings
  • [27] X. Zhou, S. A. Dayeh, D. Aplin, D. Wang, and E. T. Yu, J. Vac. Sci. Technol. A 2006, 24, 2036.
    Google ScholarLocate open access versionFindings
  • [28] S. Datta, Electronic Transport in Mesoscopic Systems, Cambridge University Press, Cambridge, UK, 1995.
    Google ScholarFindings
  • [29] X. Zhou, S. A. Dayeh, D. Aplin, D. Wang, E. T. Yu, Appl. Phys. Lett. 2006, 89, 053 113. [30] http://www.silvaco.com/products/device simulation/atlas.html. The SiO2 layer was sputtered on a rotating stage at small 2007, 3, No.2, 326 – 332 2007 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim www.small-journal.com 331
    Locate open access versionFindings
  • [31] J. M. Ziman, Principles of the Theory of Solids (2nd ed.), Cambridge University Press, Cambridge, UK, 1972.
    Google ScholarFindings
  • [32] Y. Taur, T. H. Ning, Fundamentals of Modern VLSI Devices (1st ed.) Cambridge University Press, Cambridge, UK, 1998.
    Google ScholarFindings
  • [33] E. Yamaguchi, M. Minakata, Appl. Phys. Lett. 1983, 43, 965.
    Google ScholarLocate open access versionFindings
  • [34] Y. Tsuji, T. Mochizuki, T. Okamoto, Appl. Phys. Lett. 2005, 87, 62 103.
    Google ScholarLocate open access versionFindings
  • [35] W. Park, J. S. Kim, G. Yia, M. H. Bae, H. J. Lee, Appl. Phys. Lett. 2004, 85, 5052. Received: July 26, 2006 332 www.small-journal.com
    Locate open access versionFindings
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