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Graphene epitaxy by chemical vapor deposition on SiC.

NANO LETTERS, no. 4 (2011): 1786-1791

Cited: 259|Views17
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We demonstrate the growth of high quality graphene layers by chemical vapor deposition (CVD) on insulating and conductive SiC substrates. This method provides key advantages over the well developed epitaxial graphene growth by Si sublimation that has been known for decades.(1) CVD growth is much less sensitive to SiC surface defects resul...More

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