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Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect

Physical Review Letters, no. 21 (2007)

被引用1630|浏览18
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摘要

We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magneto-transport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight binding model, we extract the value of the gap as a function of the electronic density. We show that the gap can be cha...更多

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