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Electrical transport properties of single-layer WS2.

ACS nano, no. 8 (2014): 8174-8181

被引用272|浏览13
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摘要

We report on the fabrication of field-effect transistors based on single layers and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We find that the doping level strongly depends on the device environment and that long in situ annealing drastically improves the contact transparency, allowi...更多

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