Subduing surface recombination for continuous-wave operation of photonic crystal nanolasers integrated on Silicon waveguides.

Detrimental surface recombination of carriers in InP-based photonic crystal nanobeams containing quantum wells is reduced by employing chemical treatment followed by silica encapsulation. Carrier lifetime is shown to recover to 2.63ns close to the bulk value. This enables us to obtain optically pumped room-temperature continuous-wave nanolasers at 1.55 mu m integrated onto Silicon on insulator waveguide platform with a threshold of 8 mu W. (C) 2015 Optical Society of America