Highly Crystalline CVD-grown Multilayer MoSe 2 Thin Film Transistor for Fast Photodetector
SCIENTIFIC REPORTS(2015)
摘要
Hexagonal molybdenum diselenide (MoSe 2 ) multilayers were grown by chemical vapor deposition (CVD). A relatively high pressure (>760 Torr) was used during the CVD growth to achieve multilayers by creating multiple nuclei based on the two-dimensional crystal growth model. Our CVD-grown multilayer MoSe 2 thin-film transistors (TFTs) show p-type-dominant ambipolar behaviors, which are attributed to the formation of Se vacancies generated at the decomposition temperature (650 °C) after the CVD growth for 10 min. Our MoSe 2 TFT with a reasonably high field-effect mobility (10 cm 2 /V · s) exhibits a high photoresponsivity (93.7 A/W) and a fast photoresponse time (τ rise ~ 0.4 s) under the illumination of light, which demonstrates the practical feasibility of multilayer MoSe 2 TFTs for photodetector applications.
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关键词
Electronic devices,Nanosensors,Science,Humanities and Social Sciences,multidisciplinary
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