Adapting Interconnect Technology to Multigate Transistors for Optimum Performance

IEEE Transactions on Electron Devices, Volume PP, Issue 99, 2015, Pages 1-7.

被引用1|引用|浏览1|DOI:https://doi.org/10.1109/TED.2015.2487888
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摘要

Beyond the 22-nm technology node, interconnect parasitics are increasingly contributing to the degradation of circuit performance. Thus, the focus is on optimizing interconnect parasitics in order to achieve optimum performance. The increased total device capacitance and the reduced device resistance of multigate transistors amplify the i...更多

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