Impact of Al2O3 Passivation on AlGaN/GaN Nanoribbon High-Electron-Mobility Transistors

Joglekar, S.

Azize, M.

Jones, E.J.

Piedra, D.

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Electron Devices, IEEE Transactions, Volume 63, Issue 1, 2015, Pages 318-325.

Cited by: 18|Bibtex|Views2|DOI:https://doi.org/10.1109/TED.2015.2500159

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Keywords:

Atomic-layer deposition (ALD)gallium nitride (GaN)nanoribbonpassivationpassivation.

Abstract:

Passivation films are used in III-nitride (III-N) based devices to suppress current collapse and improve frequency performance. Several passivation films and deposition methods have the added effects of increasing the dc ON- and OFF-state currents in devices. In this paper, the physical mechanisms behind this current increase have been st...More

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