Crystallization of Au x Si1−x amorphous alloys

Philosophical Magazine Part B(2006)

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摘要
Abstract Amorphous Au x Si1−x alloys have been prepared by vapour deposition at 77 K over a wide range of composition (0  x  0·80). Crystallization has been studied by electrical resistivity measurements, electron microscopy and diffraction. A metastable crystalline phase μ is formed before reaching the equilibrium dissociation into crystalline gold and silicon. This metastable phase has a composition near Au3Si and may be obtained alone or in a mixture with silicon depending on the amorphous alloy composition. Short-range order in the amorphous material is discussed with respect to the structure of the μ phase. It is suggested that amorphous alloys appear to exist as a single phase only at the Si-rich end of the composition range and near the eutectic composition.
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关键词
electron microscopy,electrical resistance,amorphous material
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