Uncooled, low-driving-current 25.8 Gbit/s direct modulation using 1.3 μm AlGaInAs MQW distributed-reflector lasers
Electronics Letters(2012)
摘要
Uncooled, low-driving-current 25.8 Gbit/s direct modulation with clear eye-opening up to 85°C is demonstrated using 1.3 μm AIGalnAs mul- tiple quantum well (MQW) distributed-reflector lasers. The peak driving currents were as low as 30.0 and 38.9 mA at 25 and 85°C, respectively.
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关键词
aluminium compounds,gallium compounds,III-V semiconductors,quantum well lasers,semiconductor quantum wells
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