1.55 μm bottom-emitting InAlGaAs VCSELs with Al 2 O 3 /a-Si thin-film pairs as top mirror

H W Song,Won Seok Han,J H Kim,Oh Kee Kwon,Y G Ju, Jin Ho Lee,Sanghee Kopark,Seung Goo Kang

Electronics Letters（2004）

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摘要

A a 1.55 /spl mu/m InAlGaAs/InP vertical-cavity surface-emitting laser grown by metal-organic chemical vapour deposition is presented. Al/sub 2/O/sub 3//a-Si thin-film pairs and InAlGaAs/InAlAs epitaxial layers are used as a top mirror and a bottom-side output coupler, respectively. Direct modulation characteristics through singlemode fibre are reported at a speed of 2.5 Gbit/s.

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aluminium compounds,indium compounds,gallium arsenide,alumina,silicon,III-V semiconductors,elemental semiconductors,amorphous semiconductors,semiconductor epitaxial layers,semiconductor growth,MOCVD,optical modulation,fibre lasers,surface emitting lasers,quantum well lasers

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