Spin-resolved conductance quantization in InAs
SEMICONDUCTOR SCIENCE AND TECHNOLOGY(2014)
摘要
We report on the quantized conductance through side-and top-gated InAs quantum point contacts and discuss its dependence on the temperature and on a magnetic field applied perpendicular to the sample plane. Even in the absence of a magnetic field we observe besides the integer steps in units of 2e(2) /h spin-resolved steps in units of e(2) /h up to the highest occupied mode. A conductance anomaly at 0.7 x 2e(2) /h is found as well.
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关键词
quantum point contact,InAs heterostructures,conductance quantization,spin-resolved transport,edge channels
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