Indium-zinc-oxide electric-double-layer thin-film transistors gated by silane coupling agents 3-triethoxysilylpropylamine–graphene oxide solid electrolyte

Silane coupling agents 3-triethoxysilylpropyla-mine-graphene oxide (KH550-GO) solid electrolyte are prepared by spin coating process. A high proton conductivity of similar to 1.2 x 10(-3) Scm(-1) is obtained at room temperature. A strong electric-double-layer (EDL) effect is observed due to the accumulation of protons at KH550-GO/IZO interface. IndiumZinc- Oxide thin film transistors gated by KH550-GO solid electrolyte are self-assembled on ITO glass substrates. Good electrical performances are obtained, such as a low subthreshold swing of similar to 140 mV/dec., a high current on/off ratio of similar to 2.9 x 10(7) and a high field-effect mobility of similar to 13.2 cm(2) V-1 S-1, respectively.