Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors
IEEE Transactions on Electron Devices(2013)
摘要
In this paper, we present self-consistent electrothermal simulations of single-finger and multifinger GaN vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) and lateral AlGaN/GaN high-electron-mobility transistors (HEMTs) and compare their thermal performance. The models are first validated by comparison with experimental dc characteristics, and then used to study the maximum ac...
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关键词
MOSFET,Gallium nitride,HEMTs,MODFETs,Density measurement,Power system measurements,Performance evaluation
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