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An Improved Virtual-Source-Based Transport Model for Quasi-Ballistic Transistors—Part II: Experimental Verification

shaloo rakheja
shaloo rakheja
mark s lundstrom
mark s lundstrom
dimitri a antoniadis
dimitri a antoniadis

IEEE Transactions on Electron Devices, pp. 2794-2801, 2015.

Cited by: 0|Bibtex|Views4|DOI:https://doi.org/10.1109/TED.2015.2457872
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Other Links: academic.microsoft.com
Keywords:
HEMTsLogic gatesData modelsCapacitanceIndium gallium arsenideMore(2+)

Abstract:

In the first part of this two-part paper, a revised MIT virtual-source (MVS)-based transport model, called MVS-2, is presented. The MVS-2 model captures the essential physics of quasi-ballistic nanotransistors by accounting for the effects of: 1) degeneracy on the thermal velocity and the mean free path of the carriers in the channel; 2) ...More

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