The Effect of Self-Heating in LDMOSFET Expansion Regime

Hsuehliang Chou,Jacky C W Ng,Rueyhsin Liou,Yuchang Jong,Hsiaochin Tuan,Chihfang Huang,Jeng Gong

IEEE Transactions on Electron Devices（2012）

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摘要

In this paper, it is the first time that the effect of self-heating of LDMOS transistors operating in the so-called expansion regime of the output characteristics is studied. Experimental characterization and numerical simulations are used to demonstrate that, in order to explain the origin of the current enhancement phenomenon observed in the output characteristics of LDMOS transistors biased at ...

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关键词

Transistors,Impact ionization,MOSFET circuits,Temperature,Isothermal processes,Temperature measurement,Logic gates

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