CMOS Fully Compatible Embedded Non-Volatile Memory System With $\hbox{TiO}_{2}\hbox{-SiO}_{2}$ Hybrid Resistive-Switching Material
IEEE Transactions on Magnetics(2011)
摘要
We demonstrate a non-volatile CMOS fully compatible embedded memory cell with a hybrid resistive switching material, TiO2-SiO2, in a 0.18 μm node CMOS process. Both voltage-and temperature-dependent transports indicate that a Schottky-type resistance switching model dominates the TiO2 based transition-metal-oxide resistive random access memory (TMO-RRAM) system. Data retention is improved by inser...
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关键词
Resistance,Switches,Schottky barriers,Materials,CMOS integrated circuits,Fabrication,Nanoscale devices
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