A comparison of radiation damage in Al by channeled and random beams of 0.6 MeV He+ ions

The trapping rate of self-interstitial atoms at Ag solute atoms in an Al–0.05 at.% Ag crystal at 70 K was determined by channeling measurements. It was found that the trapping rate (and thus the radiation damage) caused by a channeled beam of 0.6 MeV He+ ions was equal to the trapping rate caused by a randomly aligned beam multiplied by the normalized yield of backscattered ions from Al atoms.