Effect of Nitridation on Indium-Composition of InGaN Films
Key Engineering Materials(2012)
摘要
The present study aims to understand the relation between the nitridation and indium-composition of InGaN grown on sapphire substrate using the metalorganic vapor phase epitaxy through X-ray diffraction reciprocal space mapping measurements. In-composition of InGaN on nitrided sapphire substrate increased to 13% which is higher than the sample without nitridation with 7%. Also, flat surface was observed in the nitrided sample. Two times larger in-plane strain was induced at the nitired sample. InGaN grown on low-temperature GaN buffer, however, did not show clear effect of nitridation. The two investigated samples showed similar Indium composition, surface flatness, and in-plane strain with and without nitridation. Differences of indium incorporation and relaxation of in-plane strain were attributed to the effect of AlN formed by nitridation process.
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关键词
InGaN,In-composition,Reciprocal space mapping,Nitridation
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