Wafer-Scale Gan Hemt Performance Enhancement By Diamond Substrate Integration
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4(2014)
摘要
A wafer-scale comparison of HEMTs fabricated on as-grown GaN/Si and HEMTs fabricated in parallel on epitaxial layers from the GaN/Si growth integrated with a diamond substrate are presented. Diamond, which offers the highest room-temperature thermal conductivity of any bulk material, is being evaluated as a solution for thermal limitations observed in GaN-based devices. This paper will present electrical and thermal data collected at the wafer scale demonstrating the improvement realized by integration of a high-thermal-conductivity substrate. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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关键词
GaN/diamond,thermal resistance,diamond substrate integration
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