Study Of Uniformity Of High Performance Alinn Hemt With Ultra-Thin Barrier

Xiang Gao,Daniel Gorka,Paul Saunier, Andrew Ketterson,Lin Zhou,David J. Smith,Shiping Guo

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8（2011）

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摘要

High performance AlInN/AlN HEMTs with Ga free barrier and sharp interface have been demonstrated with excellent control of sheet resistance and uniformity. As the total barrier thickness reduce to below 4 nm, the depletion of 2DEG channel start to accelerate, and consequently the sheet resistant uniformity degrades due to the difficulty in individual thickness uniformity control at this level. Significant better uniformity was achieved after improvement in AlN process. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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关键词

AlN,AlInN,GaN,high-performance,HEMT

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