Ultra-Thin Barrier Quaternary Inalgan Hemts With State Of The Art Sheet Resistance
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4(2014)
摘要
We report transport properties measured from quaternary barrier InAlGaN high electron mobility transistor wafers on SiC substrates. With similar barrier thicknesses, higher mobility and sheet charge density were both demonstrated by a strained barrier quaternary In0.07Al0.75Ga0.18N HEMT comparing to a ternary In0.17Al0.83N HEMT with lattice matched barrier to the GaN buffer. With 1 nm AlN interlayer, sheet resistances of 218 Omega/square and 228 Omega/square were obtained from 4.8 nm and 4.4 nm barrier structures, respectively. Both structures also show excellent electron motilities. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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关键词
InAlN,InAlGaN quaternary MOCVD
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