Evaluation Of Ohmic Contacts Formed By B+ Implantation And Ti-Au Metallization On Diamond

Low-resistance ohmic contacts have been fabricated on a naturally occurring B-doped diamond crystal and on polycrystalline diamond films by B ion implantation and subsequent Ti/Au bilayer metallization. A high B concentration was obtained at the surface by ion implantation, a post-implant anneal, and a subsequent chemical removal of the graphite layer. A bilayer metallization of Ti followed by Au, annealed at 850-degrees-C, yielded specific contact resistance (rho(c)) values of the order of 10(-5) OMEGA cm2 for chemical vapor deposition grown polycrystalline films and the natural IIb crystal. The rho(c) values from transmission line model measurements on three different contact configurations, namely, standard rectangular pads, rectangular pads on diamond mesas, and three-ring circular structures have been compared. These contacts were stable to a measurement temperature of approximately 400-degrees-C and no degradation due to temperature cycling was observed. Chemical analysis by x-ray photoelectron spectroscopy (XPS) in conjunction with Ar+ sputter depth profiling of the annealed samples indicated that the Au overlayer was not effective in preventing oxidation of the underlying Ti. The XPS study also indicated the formation of TiC at the Ti/diamond interface.