N-Si/I-P-I Sige/N-Si Structure For Sige Microwave Power Heterojunction Bipolar Transistor Grown By Ultra-High-Vacuum Chemical Molecular Epitaxy
JOURNAL OF APPLIED PHYSICS(1999)
摘要
The n-Si/i-p-i SiGe/n-Si structure, grown by ultra-high-vacuum chemical molecular epitaxy, was analyzed by cross-sectional transmission electron microscopy and secondary ion mass spectroscopy. It is shown that no defects are observed in the n-Si/i-p-i SiGe/n-Si structure, the interfaces between the SiGe layer and the n-Si layers are clear and planar, both the Ge and boron atoms are uniformly distributed in the p-SiGe, and the profiles of boron and Ge are abrupt from the n-Si to the SiGe layer. A high-performance microwave power SiGe heterojunction bipolar transistor was fabricated using the n-Si/i-p-i SiGe/n-Si structure. Therefore, ultra-high-vacuum chemical molecular epitaxy is one of the most promising methods for the growth of the Si/SiGe strained epilayers. (C) 1999 American Institute of Physics. [S0021-8979(99)04715-5].
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关键词
ion beam,power electronics,transmission electron microscopy,epitaxial growth,bipolar transistor,cross section,heterojunction bipolar transistor,ultra high vacuum
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