Improvement Of The Stability Under Illumination Of A-Si : H Films Elaborated By Ion-Beam-Assisted Evaporation Using A Hydrogen-Argon Plasma

Hydrogenated amorphous silicon films were deposited by ion-beam-assisted evaporation using a hydrogen-argon plasma. The influence of the substrate temperature was studied. Light induced photoconductivity decay measurements showed that high stability materials can be obtained under well defined conditions. By combined infrared spectrometry and thermal desorption spectrometry experiments, it was demonstrated that microstructure has a great influence on the stability against light induced defects. (C) 1998 American Institute of Physics.