Effects of lateral overgrowth on residual strain and In incorporation in a-plane InGaN/GaN quantum wells on r-sapphire substrates

moontaek hong
moontaek hong
younghak chang
younghak chang
gyuhyun bang
gyuhyun bang
hyunggu kim
hyunggu kim
jina jeon
jina jeon

Journal of Applied Physics, 2013.

Cited by: 1|Bibtex|Views2|DOI:https://doi.org/10.1063/1.4774302
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