Ultrafast Crystallization And Thermal Stability Of In-Ge Doped Eutectic Sb70te30 Phase Change Material

JOURNAL OF APPLIED PHYSICS, no. 4 (2008)

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摘要

Effect of In and Ge doping in the form of In2Ge8Sb85Te5 on optical and thermal properties of eutectic Sb70Te30 alloys was investigated. Crystalline structure of In2Ge8Sb85Te5 phase change material consists of a mixture of phases. Thermal analysis shows higher crystallization temperature and activation energy for crystallization. Isotherma...更多

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简介
  • Eutectic Sb70Te30 fast-growth material is one of the promising host candidates for high data transfer recording.1,2 Being a growth-dominated material, it is attractive for phase change recording at short wavelengths and/or high numerical apertures because the data transfer rate scales inversely with the spot size of the laser.3 it suffers from poor thermal stability, which is detrimental to the archival stability of the disk.
  • Being a growth-dominated material, it is attractive for phase change recording at short wavelengths and/or high numerical apertures because the data transfer rate scales inversely with the spot size of the laser.3.
  • It suffers from poor thermal stability, which is detrimental to the archival stability of the disk.
  • Many studies had been carried out to improve the thermal stability of Sb70Te30 by addition of dopants such as Cu, Co, Ag, Pb, Sn, Se, and Sb.4–7 In particular, AgInSbTe alloy system had been extensively studied and some of them were successfully used in compact disk rewritableRWand digital versatile disk RW.8,9 Even though the archival stability of eutectic Sb70Te30 was effectively improved by addition of Ag and In elements, the initialization of the as-deposited eutectic SbTe film was made more difficult and the crystallization speed of the material was reduced.10 investigation of alternative dopants that retain its growth-dominated characteristic and improve the thermal stability without compromising on the crystallization behavior is required
重点内容
  • Being a growth-dominated material, it is attractive for phase change recording at short wavelengths and/or high numerical apertures because the data transfer rate scales inversely with the spot size of the laser.3. It suffers from poor thermal stability, which is detrimental to the archival stability of the disk
  • Even though the archival stability of eutectic Sb70Te30 was effectively improved by addition of Ag and In elements, the initialization of the as-deposited eutectic SbTe film was made more difficult and the crystallization speed of the material was reduced
  • In–Ge doped Sb70Te30 in the form of In2Ge8Sb85Te5 phase change material has a higher crystallization temperature of 184 ° C and activation energy of 3.5 eV compared to eutectic Sb70Te30 phase change material
  • The crystallization speed was not compromised due to the weaker In binding energy and the high Sb content that allowed crystallization of as-deposited In2Ge8Sb85Te5 to be completed within 30 ns and still retaining its growthdominated crystallization characteristic
  • A CNR value of 32 dB and readout thermal stability of 20 000 cycles were obtainable for 80 nm mark trains
结果
  • Figure 1 shows the XRD pattern of the 50-nm-thick annealed In2Ge8Sb85Te5 films synthesized at 190 ° C, compared to crystalline Sb70Te30 film.
  • Rhombohedral Sb and Sb2Te3 phases were observed in Sb70Te30 film, as observed by other authors.14–16.
  • More phases were observed for crystalline In2Ge8Sb85Te5 film.
  • InSb, In2Te3, and GeTe phases were found.
  • Similar peaks were observed for.
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  • Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions.
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结论
  • In–Ge doped Sb70Te30 in the form of In2Ge8Sb85Te5 phase change material has a higher crystallization temperature of 184 ° C and activation energy of 3.5 eV compared to eutectic Sb70Te30 phase change material.
  • The crystallization speed was not compromised due to the weaker In binding energy and the high Sb content that allowed crystallization of as-deposited In2Ge8Sb85Te5 to be completed within 30 ns and still retaining its growthdominated crystallization characteristic
  • The use of this ultrafast and thermally stable phase change material as a mask layer in blue-ray aperture-type super-RENS disk had been realized.
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